Applications TheHMC6590isidealfor:•40GbE-FR•40GBpsVSR/SFF•Short,intermediate,andlong-haulopticalreceivers FunctionalDiagram HMC6590 43GbpsTransimpedanceAmplifier Features •Supportsdataratesupto43Gbps•InternalDCAfeedbackwithexternaladjustmentoption•4Kohmdifferentialtransimpedancegain•Low-powerdissipation<300mW•-10.5dBmopticalinputsensitivity•+5dBmopticaloverload•Smalldiesize:1.15mmx1.21mmx0.15mm GeneralDescription TheHMC6590isahigh-speed,highgain,low-powerlimitingtransimpedanceamplifier(TIA)usedinopticalreceiverswithdataratesupto43Gbps.Itfeatureslowinputreferrednoise,36GHzbandwidth,4kohmdifferentialsmallsignaltransimpedanceandoutputcrosspointadjustment.HMC6590exhibitsanopticalinputdynamicrangebetween-10dBmand+5dBmwhilemaintaining10e-12BERat43Gbpsoperation.TheHMC6590isavailableindieform,includesanon-chipVCCbypasscapacitor.Itrequiresonlysupplydecouplingcapacitorasponent.TheHMC6590requiresasingle3.3V±5%supplyandittypicallydissipateslessthan300mW.Thedeviceischaracterizedforoperationfrom–5°Cto+85°Ctemperature. transimpedanceamplifiers-chip Forprice,delivery,andtoplaceorders:AnalogDevices,Inc.,OneTechnologyWay,Norwood,MA02062
1 978-250-3343tel•978-250-3373fax•Orderonlineat/hittitemw ApplicationSupport:Phone:978-250-3343orRFMG-apps@ HMC6590*PRODUCTPAGEQUICKLINKS LastContentUpdate:02/23/2017 COMPARABLEPARTS Viewaparametricsearchparableparts. DOCUMENTATION DataSheet•HMC6590:43GbpsTransimpedanceAmplifierDataSheet REFERENCEMATERIALS QualityDocumentation•SemiconductorQualificationTestReport:BiCMOS-D(QTR: 2014-00061) DESIGNRESOURCES •HMC6590MaterialDeclaration•PCN-PDNInformation•QualityAndReliability•SymbolsandFootprints DISCUSSIONS ViewallHMC6590EngineerZoneDiscussions. SAMPLEANDBUY Visittheproductpagetoseepricingoptions. TECHNICALSUPPORT Submitatechnicalquestionorfindyourregionalsupportnumber. DOCUMENTFEEDBACK Submitfeedbackforthisdatasheet. ThispageisdynamicallygeneratedbyAnalogDevices,Inc.,andinsertedintothisdatasheet.Adynamicchangetothecontentonthispagewillnottriggerachangetoeithertherevisionnumberorthecontentoftheproductdatasheet.Thisdynamicpagemaybefrequentlymodified. v02.1014 HMC6590 43GbpsTransimpedanceAmplifier ElectricalSpecifications,T=+25°
C,=3.3VA Parameter Conditions Min. MaxDataRate NRZ 43 Z21SmallSignalBandwidth[3] 3dBcutoff z213dBLowCutoffFrequency Transimpedance(Z21) Differential@100MHz GroupDelayVariation Upto40GHz DifferentialOutputSwing @43Gbps(saturated) InputReferredRMSNoise Upto35GHz InputReferredNoiseDensitiy. RMSnoiseper35GHz OpticalInputSensitivity[1](OMA) Responsivity=0.65A/W,ER=9dB OpticalOverloadPower[2](OMA) Responsivity=0.65A/W,ER=9dB InputOverloadCurrent OutputReturnLoss(S22) Upto40ΩGHz AdditiveRMSJitter 40Gbps1010...stream InputDCVoltage Internallygenerated OperationalSupplyVoltageRange ±5% 3.15 SupplyCurrent =3.3V OperatingTemperatureRange(Diebackside) -
5 [1]Sensitivitydependsonphotodiode,packaging,BERTsensitivity,inputeyequalityandopticalcoupling.[2]t=1.7V[3]50Ωonwafermeasurementresults. Typ. 39504±154503.320-10.5+54 1.23.394 Max. -100.53.45+85 UnitsGbpsGHzKHzKOhmpsecmVp-p uApA/√Hz dBmdBmmAp-pdB psVVmA°
C OutputReturnLoss@VCC=3.3V[1] -
5 -10 -15 -20 -25 -300 +terminal-terminal 5101520253035404550FREQUENCY(GHz) GroupDelay@VCC=3.3V[1] 120 +terminal-terminal100 80 60 400 5101520253035404550FREQUENCY(GHz) TransimpedancevsFrequencyoverSupply[2] 80 OUTPUTRETURNLOSS(dB)TRANSIMPEDANCE(dBOhm) GROUPDELAY(ps) transimpedanceamplifiers-chip 70 60 50 400 [1]50Ωonwafermeasurementresults.[2]Assumesphotodiodeandassemblymodelonpage3. 3.13V3.30V3.47V 5101520253035404550FREQUENCY(GHz) Forprice,delivery,andtoplaceorders:AnalogDevices,Inc.,OneTechnologyWay,Norwood,MA02062 978-250-3343tel•978-250-3373fax•Orderonlineat/hittitemw
2 ApplicationSupport:Phone:978-250-3343orRFMG-apps@ v02.1014 HMC6590 43GbpsTransimpedanceAmplifier PhotoDiodeModelandAssemblyAssumptions PhotodiodeandassemblydiagrammodelusedinZ21andinputreferrednoisedensitycalculations: •CPD=50fF•RS=15Ω•LPD+LIN=0.35nH•LOUT=0.25nH•LGND=0.25nH•L=0.25nH VDD AssemblyDiagramforUsingIntegratedPhotoDiodeSupplyVPD transimpedanceamplifiers-chip Suggestedassemblyconfigurationforusinginternalsupplyforphoto-diode.Suggestedbond-wirelengthforoptimumperformance isasfollows: •LPD+LIN<0.35mm•LOUT<0.25mm(double-bondismended)•LGND<0.25mm(double-bondforlargerpads)•LVCC<0.25mm(double-bondismended) Forprice,delivery,andtoplaceorders:AnalogDevices,Inc.,OneTechnologyWay,Norwood,MA02062
3 978-250-3343tel•978-250-3373fax•Orderonlineat/hittitemw ApplicationSupport:Phone:978-250-3343orRFMG-apps@ v02.1014 HMC6590 43GbpsTransimpedanceAmplifier AssemblyDiagramforSeparatePhotoDiodeSupply transimpedanceamplifiers-chip Suggestedassemblyconfigurationforseparatephotodiodesupply.Suggestedbond-wirelengthforoptimumperformanceisasfollows:•LPD+LIN<0.35mm•LOUT<0.25mm(double-bondismended)•LGND<0.25mm(double-bondforlargerpads)•LVCC<0.25mm(double-bondismended) ApplicationCircuit Forprice,delivery,andtoplaceorders:AnalogDevices,Inc.,OneTechnologyWay,Norwood,MA02062 978-250-3343tel•978-250-3373fax•Orderonlineat/hittitemw
4 ApplicationSupport:Phone:978-250-3343orRFMG-apps@ v02.1014 AbsoluteMaximumRatings VoltagelevelattheRFinput(Vin)CurrentlevelattheRFinput(In)VoltagelevelattheRFoutputSupplyVoltage(VCC)Max.JunctionTemperatureContinuousPdiss(T=85°C)(Derate30.23mW/°Cabove85°C) -0.6Vto2.5V0to10mAVCC-1toVCC+1-0.6Vto3.75V125°C 1.21W ThermalResistanceRth(Junctiontodiebottom)StorageTemperatureOperatingTemperature(Diebackside)ESDSensitivityLevel(HBM) 33.08°C/W-55to+125°C-5to+85°CClass0(>150V) ELECTROSTATICSENSITIVEDEVICEOBSERVEHANDLINGPRECAUTIONS OutlineDrawing HMC6590 43GbpsTransimpedanceAmplifier DiePackagingDrawing[1] Standard Alternate GP-1(GelPack) [2] [1]Formoreinformationrefertothe“PackagingInformation”DocumentintheProductSupportSectionofourwebsite. [2]ForalternatepackaginginformationcontactHittiteMicrowaveCorporation. DiePadsDimensions Pads PadSize 1,23,24 0.0047[0.120]X0.0033[0.085]
2 0.0033[0.085]X0.0043[0.110] 3-6,16-20 0.0033[0.085]X0.0051[0.130]
7 0.0033[0.085]X0.0039[0.100] 8,9,12,13,22 0.0051[0.130]X0.0033[0.085] 10,11 0.0040[0.101]X0.0033[0.085] 14 0.0033[0.085]X0.0093[0.100] 15 0.0033[0.085]X0.0047[0.120] 21 0.0098[0.250]X0.0033[.085] transimpedanceamplifiers-chip NOTES:
1.ALLDIMENSIONSAREININCHES[MM]
2.DIETHICKNESSIS.006”
3.BONDPADMETALIZATION:ALUMINUM4.NOBACKSIDEMETAL5.OVERALLDIESIZE±.002” Forprice,delivery,andtoplaceorders:AnalogDevices,Inc.,OneTechnologyWay,Norwood,MA02062
5 978-250-3343tel•978-250-3373fax•Orderonlineat/hittitemw ApplicationSupport:Phone:978-250-3343orRFMG-apps@ PadDescriptions PadNumber Function 1,2,3,5,7,8,1023,26 GND1
4 IN v02.1014 HMC6590 43GbpsTransimpedanceAmplifier DescriptionGroundconnectionforTIA. InterfaceSchematic TIAinput. 6VPDProvidesbiasvoltageforphoto-diode(PD)througha50Ωresistor/workfromVCC1.
9 VCC1 PowersupplyforinputstageandPD. 11,12,14,15,1719-22,25 GND2 GroundconnectionforTIA. 13 VCC2 Powersupplyforoutputbuffers. 16 OUTP Non-inverteddataoutputwith50Ωbacktermination. 18 OUTN Inverteddataoutputwith50Ωbacktermination. 22DCADCoffsetcontrol.VoltageatthispadsetsoutputDCoffset.Whenitisfloating,DCoffsetisat0V. transimpedanceamplifiers-chip Overloadpensationcontrol.Voltageatthispadsetsthestrengthoftheinputoverloadcurrent24VOVLCNTcontrol.Whenitisfloating,overloadcontrolissetto nominal(VCC1/2).OverloadperformancecanbeoptimizedbyadjustingVOVLCNTvoltage between1.6V-3.3V. Forprice,delivery,andtoplaceorders:AnalogDevices,Inc.,OneTechnologyWay,Norwood,MA02062 978-250-3343tel•978-250-3373fax•Orderonlineat/hittitemw
6 ApplicationSupport:Phone:978-250-3343orRFMG-apps@ v02.1014 HMC6590 43GbpsTransimpedanceAmplifier Mounting&BondingTechniquesforMMICs Thedieshouldbeattacheddirectlytothegroundplanewithepoxy(seeHMCgeneralHandling,Mounting,BondingNote). 50ΩMicrostriptransmissionlineson0.254mm(10mil)thickaluminathinfilmsubstratesaremendedforbringinghighspeeddifferentialsignalfromthechipRFtoandfromthechip(Figure1). Microstripsubstratesshouldbeplacedasclosetothedieaspossibleinordertominimizebondwirelength.Typicaldie-to-substratespacingis0.076mmto0.152mm(3to6mils). HandlingPrecautions Followtheseprecautionstoavoidpermanentdamage. Storage:AllbaredieareplacedineitherWaffleorGelbasedESDprotectivecontainers,andthensealedinanESDprotectivebagforshipment.OncethesealedESDprotectivebaghasbeenopened,alldieshouldbestoredinadrynitrogenenvironment. Cleanliness:Handlethechipsinacleanenvironment.DONOTattempttocleanthechipusingliquidcleaningsystems. StaticSensitivity:FollowESDprecautionstoprotectagainstESDstrikes. Transients:Suppressinstrumentandbiassupplytransientswhilebiasisapplied.Useshieldedsignalandbiascablestominimizeinductivepick-up. GeneralHandling:Thechipmaybehandledbyavacuumcolletorwithapairofsharptweezers. Mounting EpoxyDieAttach:Applyaminimumamountofepoxytothemountingsurfacesothatathinepoxyfilletisobservedaroundtheperimeterofthechiponceitisplacedintoposition.Cureepoxyperthemanufacturer’sschedule. transimpedanceamplifiers-chip Forprice,delivery,andtoplaceorders:AnalogDevices,Inc.,OneTechnologyWay,Norwood,MA02062
7 978-250-3343tel•978-250-3373fax•Orderonlineat/hittitemw ApplicationSupport:Phone:978-250-3343orRFMG-apps@