PD91463B INSULATEDGATEBIPOLARTRANSISTOR IRG4PC40F FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage
C GE n-channel VCES=600VVCE(on)typ.=1.50V @VGE=15V,IC=27A Benefits •Generation4IGBT'sofferhighestefficiencyavailable•IGBT'soptimizedforspecifiedapplicationconditions•Designedtobea"drop-in"replacementforequivalent industry-standardGeneration3IRIGBT's AbsoluteMaximumRatings Parameter VCESIC@TC=25°CIC@TC=100°CICMILMVGEEARVPD@TC=25°CPD@TC=100°CTJTSTG Collector-to-EmitterBreakdownVoltageContinuousCollectorCurrentContinuousCollectorCurrentPulsedCollectorCurrentQClampedInductiveLoadCurrentRGate-to-EmitterVoltageReverseVoltageAvalancheEnergySMaximumPowerDissipationMaximumPowerDissipationOperatingJunctionandStorageTemperatureRangeSolderingTemperature,for10seconds Mountingtorque,6-32orM3screw. ThermalResistance RθJCRθCSRθJAWt ParameterJunction-to-CaseCase-to-Sink,Flat,GreasedSurfaceJunction-to-Ambient,typicalsocketmountWeight TO-247AC Max.6004927200200±201516065-55to+150 300(0.063in.(1.6mmfromcase)10lbf•in(1.1N•m) UnitsVA VmJW °
C Typ.–––0.24–––6(0.21) Max.0.77–––40––– Units °C/W g(oz) 1 12/30/00 IRG4PC40F ElectricalCharacteristics@TJ=25°C(unlessotherwisespecified) V(BR)CESV(BR)ECS∆V(BR)CES/∆TJ ParameterCollector-to-EmitterBreakdownVoltageEmitter-to-CollectorBreakdownVoltageTTemperatureCoeff.ofBreakdownVoltage VCE(ON) Collector-to-EmitterSaturationVoltage VGE(th) GateThresholdVoltage ∆VGE(th)/∆TJTemperatureCoeff.ofThresholdVoltage gfe ForwardTransconductanceU ICES ZeroGateVoltageCollectorCurrent IGES Gate-to-EmitterLeakageCurrent Min.60018————3.0—9.2———— Typ.Max.————0.70—1.501.71.85—1.56——6.0-12—12——250—2.0—1000—±100 UnitsVV V/°
C V mV/°CSµA nA Conditions VGE=0V,IC=250µ
A VGE=0V,IC=1.0A VGE=0V,IC=1.0mA IC=27A VGE=15V IC=49A SeeFig.2,
5 IC=27A,TJ=150°
C VCE=VGE,IC=250µ
A VCE=VGE,IC=250µ
A VCE=100V,IC=27A VGE=0V,VCE=600V VGE=0V,VCE=10V,TJ=25°
C VGE=0V,VCE=600V,TJ=150°
C VGE=±20V SwitchingCharacteristics@TJ=25°C(unlessotherwisespecified) QgQgeQgctd(on)trtd(off)tfEonEoffEtstd(on)trtd(off)tfEtsLECiesCoesCres Notes: ParameterTotalGateCharge(turn-on)Gate-EmitterCharge(turn-on)Gate-CollectorCharge(turn-on)Turn-OnDelayTimeRiseTimeTurn-OffDelayTimeFallTimeTurn-OnSwitchingLossTurn-OffSwitchingLossTotalSwitchingLossTurn-OnDelayTimeRiseTimeTurn-OffDelayTimeFallTimeTotalSwitchingLossInternalEmitterInductanceInputCapacitanceOutputCapacitanceReverseTransferCapacitance Min.——————————————————— Typ.100153526182401700.371.812.1825213803103.913220014029 Max.1502353——360250——2.8————————— UnitsnC ns mJ nsmJnHpF Conditions IC=27A VCC=400V SeeFig.8 VGE=15V TJ=25°CIC=27A,VCC=480VVGE=15V,RG=10ΩEnergylossesinclude"tail"SeeFig.10,11,13,14 TJ=150°
C, IC=27A,VCC=480V VGE=15V,RG=10Ω Energylossesinclude"tail" SeeFig.13,14 Measured5mmfrompackage VGE=0V VCC=30V SeeFig.7 ƒ=1.0MHz QRepetitiverating;VGE=20V,pulsewidthlimitedbymax.junctiontemperature.(Seefig.13b) RVCC=80%(VCES),VGE=20V,L=10µ
H,RG=10Ω,(Seefig.13a) SRepetitiverating;pulsewidthlimitedbymaximumjunctiontemperature. TPulsewidth≤80µs;dutyfactor≤0.1%.UPulsewidth5.0µs,singleshot.
2 LoadCurrent(A) IRG4PC40F 80 60 Squarewave: 40 60%ofrated voltage Forboth: Dutycycle:50%TJ=125°CTsink=90°CGatedriveasspecifiedPowerDissipation=35W Triangularwave: Clampvoltage:80%ofrated 20Idealdiodes
0 A 0.1
1 10 100 f,Frequency(kHz) Fig.1-TypicalLoadCurrentvs.Frequency(Forsquarewave,I=IRMSoffundamental;fortriangularwave,I=IPK) 1000 1000 IC,Collector-to-EmitterCurrent(A) IC,Collector-to-EmitterCurrent(A) TJ=25°C 100 TJ=150°C 10 100 TJ=150°
C TJ=25°C 10 VGE=15V120µsPULSEWIDTHA
1 10 VCE,Collector-to-EmitterVoltage(V) Fig.2-TypicalOutputCharacteristics VCC=50V 15µsPULSEWIDTHA
5 6
7 8
9 10 11 12 VGE,Gate-to-EmitterVoltage(V) Fig.3-TypicalTransferCharacteristics
3 IRG4PC40F MaximumDCCollectorCurrent(A) VCE,Collector-to-EmitterVoltage(V) 50VGE=15V2.5VGE=15V80µsPULSEWIDTHIC=54A 40 2.030 20 10
0 25 50 75 100 125 150 TC,CaseTemperature(°C) Fig.4-MaximumCollectorCurrentvs.CaseTemperature IC=27A 1.5 IC=14A 1.0
A -60-40-20020406080100120140160 TJ,JunctionTemperature(°C) Fig.5-TypicalCollector-to-EmitterVoltagevs.JunctionTemperature ThermalResponse(ZthJC)
1 D=0.50 0.200.1 0.10PDM 0.05 SINGLEPULSE 0.02 (THERMALRESPONSE) 0.01 t1t2 Notes:
1.DutyfactorD=t1/t2 0.01
2.PeakTJ=PDMxZthJC+TC 0.00001 0.0001 0.001 0.01 0.1
1 10 t1,RectangularPulseDuration(sec) Fig.6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4 IRG4PC40F
C,Capacitance(pF) 400030002000 VGE=0V f=1MHz Cies=Cge+Cgc+Cce Cres=Cce Coes=Cce+Cgc SHORTED Cies 1000 Coes Cres
0 A
1 10 100 VCE,Collector-to-EmitterVoltage(V) Fig.7-TypicalCapacitancevs.Collector-to-EmitterVoltage VGE,Gate-to-EmitterVoltage(V) 20 VCE=400VIC=27A 16 12
8 4
0 A
0 20 40 60 80 100 120 Qg,TotalGateCharge(nC) Fig.8-TypicalGateChargevs.Gate-to-EmitterVoltage 2.60 VCC=480VVGE=15VTJ=25°C 2.50IC=27A TotalSwitchigLosses(mJ) 2.40 2.30 2.20 2.100
A 10 20 30 40 50 60 RG,GateResistance(Ω) Fig.9-TypicalSwitchingLossesvs.GateResistance TotalSwitchingLosses(mJ) 10 IC=54A IC=27A
1 IC=14A RG=10ΩVGE=15V 0.1 VCC=480VA -60-40-20020406080100120140160 TJ,JunctionTemperature(°C) Fig.10-TypicalSwitchingLossesvs.JunctionTemperature
5 TotalSwitchingLosses(mJ)IC,Collector-to-EmitterCurrent(A) IRG4PC40F 10 RG=10ΩTJ=150°CVCC=480V 8VGE=15V
6 4
2 0
A 0 10 20 30 40 50 60 IC,Collector-to-EmitterCurrent(A) Fig.11-TypicalSwitchingLossesvs.Collector-to-EmitterCurrent 1000 VGGEE=20V TJ=125°C 100SAFEOPERATINGAREA 10
1 1 10 100 1000 VCE,Collector-to-EmitterVoltage(V) Fig.12-Turn-OffSOA
6 IRG4PC40F
L D.U.T. VC*50V 1000V QR *DriversametypeasD.U.T.;Vc=80%ofVce(max)*Note:Duetothe50Vpowersupply,pulsewidthandinductor willincreasetoobtainratedId. Fig.13a-ClampedInductiveLoadTestCircuit 0-480V 480µF960V RL=4X4IC8@0V25°
C Fig.13b-PulsedCollectorCurrentTestCircuit IC LDriver* VC
D.U.T. Fig.14a-SwitchingLossTestCircuit 50V 1000VQ *DriversametypeasD.U.T.,VC=480V
R S QR
S VC90% IC5%10% td(on) 90%10% td(off) tr tf Eon Eoff Ets=(Eon+Eoff) t=5µs Fig.14b-SwitchingLossWaveforms
7 IRG4PC40F CaseOutlineandDimensions—TO-247AC 15.90(.626)15.30(.602) -B- 20.30(.800)19.70(.775) 123 14.80(.583) *14.20(.559) 3.65(.143)3.55(.140)0.25(.010)M-A- 5.50(.217) DBM 5.50(.217)2X4.50(.177) -C- 4.30(.170)3.70(.145) 2.40(.094)2.00(.079) 2X5.45(.215) 2X 1.40(.056)3X1.00(.039) 0.25(.010)M 3.40(.133)3.00(.118) CAS -D5.30(.209)4.70(.185) 2.50(.089)1.50(.059)
4 NOTES:1DIMENSIONS&TOLERANCINGPERANSIY14.5M,1982.2CONTROLLINGDIMENSION:INCH.3DIMENSIONSARESHOWNMILLIMETERS(INCHES).4CONFORMSTOJEDECOUTLINETO-247AC. LEADASSIGNMENTS1-GATE2-COLLECTOR3-EMITTER4-COLLECTOR 0.80(.031)3X0.40(.016)2.60(.102)2.20(.087) *LONGERLEADED(20mm)VERSIONAVAILABLE(TO-247AD)TOORDERADD"-E"SUFFIXTOPARTNUMBER CONFORMSTOJEDECOUTLINETO-247AC(TO-3P) DimensionsinMillimetersand(Inches) IRWORLDHEADQUARTERS:233KansasSt.,ElSegundo,California90245,USATel:(310)252-7105TACFax:(310)252-7903 Visitusatforsalescontactinformation.Dataandspecificationssubjecttochangewithoutnotice.12/00
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